Abstract
When SiGe HBT is in the case of normal operation, depleted approximation is not suited, and the influence of movable charge should be taken into account when c onsideri ng of their junction capacitance. Based on the analysis and study of the carr ier tr ansport of SiGe HBT, emitter junction capacitance model is developed by consider ing the carrier distribution, and the collector junction capacitance model is al so established for different current densities including base extending eff ect. The junction capacitance models are used to simulate frequency characteristics. The results of simulation show good agreements with the experimental data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
