Abstract
We present new results on the influence of uniaxial stress up to P=400 MPa along [110] direction on the electroluminescence (EL) spectra of p-Al x Ga1−x As/GaAs1−y P y /n-Al x Ga1−x As double heterostructures. With increasing stress, the emission spectra demonstrate a blue shift of up to 20 meV at a pressure of P=400 MPa, while the EL intensity increases under compression. The results are discussed in terms of changes in the band structure under uniaxial compression.
Published Version
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