Electroluminescence in quantum well heterostructures p‐AlxGa1–xAs/GaAs1–yPy/n‐AlxGa1–xAs under uniaxial stress

Abstract

AbstractWe present new results on the influence of uniaxial stress up to P = 4 kbar on the electroluminescence spectra and current–voltage characteristics of p‐Alx Ga1–x As/GaAs1–y Py /n‐Alx Ga1–x As double heterostructures usually used in TM emitting 808 nm high‐power diode lasers. With increasing stress, the emission spectra demonstrate a blue shift of up to 25 meV at a pressure of P = 4 kbar, while the electroluminescence intensity increases under compression. The different behavior of the current–voltage characteristics under uniaxial stress along [110] and [1$ \bar 1 $0] directions is mainly determined by the arising piezoelectric field. The results are also discussed in terms of changes in the band structure under uniaxial compression. The construction of the cryostat for optical measurements under uniaxial stress at liquid nitrogen temperature is described in the paper. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)