Abstract
The effects of H+ incorporation on oxygen vacancies (HO+) on the giant ferromagnetic behavior (moment up to 3.26 μB/Cu) in ZnO:Cu polycrystalline films have been closely examined using different microstructural and magnetic characterization tools. Fine thermal stability (up to 450 °C) and low resistivity demonstrate a significant correlation between Cu 3d-states and HO+ donor defects in H plasma treated ZnO:Cu films, analogous to dual-donor (VO and Zni) defects mediated case. These HO+ donors can delocalize their electrons to the orbits of Cu atoms and contribute to a stronger spin-orbit coupling interaction. Suitable HO+ defect concentration and matched proportion between Cu2+ and Cu+ species ensure that orbital momentum shall not be quenched. Hence, unexpected moment enhancement, less than spin-orbit coupling upper limit (3.55 μB/Cu), can be also expected in this scenario. The manipulation from spin-only to spin-orbit coupling mode, using a facile thermally-mediated H plasma exposure way, will allow achieving spin transport based diluted magnetic semiconductor device.
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