UNDOPED BODY SYMMETRIC DOUBLE GATE MOSFET MODELING

Abstract

Novel analytic modeling approaches for undoped body symmetric double gate MOSFETs are discussed starting with an explicit analytic description of the surface potential using a Lambert W Function type of solution. A conceptual definition of threshold for undoped body devices is used to illustrate its unusual behavior as a function of gate dielectric thickness. Finally an analytic fully consistent physical and continuous drain current description is discussed. It is based on the potentials at the surface and at the center of the silicon film evaluated at source and drain ends. It includes drift and diffusion contributions and is valid for all bias conditions, from subthreshold to strong inversion and from linear to saturation operation.