Abstract
We study the self organized growth of GaN quantum dots deposited by molecular beam epitaxy on AlxGa1–xN, with x varying between 1 and 0.21. As a result of the specific strain relaxation mechanism of AlxGa1–xN on AlN, it is found that dots can be formed for an Al content as low as about 30%. Monopolar devices have been realized by depositing Schottky contacts on n-type doped Al0.5Ga0.5N. Finally, electroluminescence of Eu-doped GaN quantum dots embedded in n-type Al0.5Ga0.5N has been demonstrated, emphasizing the potentialities of such an active layer for room temperature visible light emission. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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