Abstract
The role of TiN barrier layer on electrical performance of metal oxide semiconductor (MOS) with Si/SiO2/HfO2/ALD-TiN/ALD-TiAlC structure is investigated. It is found that the effective workfunction of TiN/TiAlC decreases with thinner TiN (in the range of 0∼3 nm). This is attributed to the lower workfunction of thinner TiN. The gate leakage Jg of the MOS capacitor with TiN barrier is slightly higher than that without TiN, while the equivalent oxide thickness is smaller. The reason is that the insertion of TiN between TiAlC and HfO2 can suppress Al diffusion and boost Ti diffusion into HfO2, leading to smaller EOT and larger leakage current. Moreover, the Jg with and without TiN are both 6 orders of magnitude lower than the traditional poly-Si/SiO2 stacks, which are lower enough for their application in device. These results are helpful to engineering the gate stacks of MOSFET.
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