Abstract
This work presents an experimental analysis of the trade-off between transistor efficiency (gm/I<inf>D</inf>) and unit gain frequency (f<inf>T</inf>) of nanosheet field effect transistors (NSFETs) with different metal gate (MG) stack, considering the influence of high temperature (T), until T=200 °C. The results are very promising for both MG stacks. The MG stack (n*) presents a high f<inf>T</inf> about 260 GHz (T=25 °C and L=28 nm) and a gm/I<inf>D</inf> about 37 V<sup>-1</sup> (T=25 °C and L=200 nm). The MG stack (m*) also presents very good characteristics, like a f<inf>T</inf> about 252 GHz (T=25 °C and L=28 nm) and a gm/I<inf>D</inf> about 35 V<sup>-1</sup> (T=25 °C and L=200 nm). From the analyses as a function of the inversion coefficient (IC), it was possible to determine that the optimal operation point occurs in the transition from moderate to strong inversion for L=28 nm and it is in strong inversion for long channel devices. In all cases, although the intrinsic voltage gain (A<inf>V</inf>) is degraded moving away from weak inversion, the degradation was not very pronounced up to the optimal operation point and considering the temperature variation, the A<inf>V</inf> presents a greater stability at the optimal point than in weak inversion.
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