Abstract
We experimentally demonstrate that the crystallization process of Ge-Sb-Te crystallites during the set operation in non-volatile phase change memory commences after threshold switching event. It is also shown that the nucleation and growth rates have opposite behaviors with the increase of set operation power: the incubation time in nucleation stage can be minimized at higher power, whereas the percolation time in growth stage is smaller at lower power. Based on these results, we introduce a two-step set pulse of high-power nucleation and low-power growth making the set write operation much faster than conventional simple rectangular or slow-quenched form.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
