Abstract
In this article, the amorphous Ge 2Sb 2Te 5 phase-change optical recording thin films are prepared under different conditions, and their dynamic crystallization process is investigated experimentally. For as-deposited amorphous samples, the influence of sputtering power on the crystallization process is not obvious, and their crystallization process is composed of onset, nucleation, and growth stages. However, for melt-quenched amorphous samples, the crystallization process is made up of nucleation and growth stages, only. Based on the classic nucleation theory of liquid droplets from supersaturated vapor, the kinetics of crystallization and the dynamic crystallization evolution of Ge 2Sb 2Te 5 is analyzed and discussed. The results show that the main reason that the crystallization time for melt-quenched amorphous samples is shorter than that for as-deposited amorphous samples is the existence of a lot of minute nuclei in the melt-quenched amorphous samples.
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