Abstract
The thermal transport behaviour of any material can be studied using electron trapping over its defects levels at varying temperatures. In this article, we describe temperature-dependent photoluminescence of tri-composite nanostructures formed using graphite, Si and ZnO [Graphite:SixZnO(1-x)]. The absorption spectra and Tauc's relationship measures the band gap of Graphite:SixZnO(1-x) tri-composite nanostructures which are obtained for all the value of 'x' keeping the concentration of graphite constant. It is observed that due to the presence of Si and ZnO, the band gap of the combined nanostructure of Graphite:SixZnO(1-x) gets widened. The outcomes of XRD/EDX reveal the presence of graphite, Si and ZnO in the obtained tri-composite nanostructure. The clear formation of nanostructures ranges (200–500) nm has been investigated and is found to be consistent with the XRD/EDX findings. Our results suggest that at elevated temperature electron gets trapped over defects levels which can be measured using photoluminescence intensity. This information provides an insight mechanism for the excitation of electrons from the conduction band to the valence band of Graphite:SixZnO(1-x) tri-composite nanostructures. However, the number of defects level and doping concentration both are linked with photoluminescence intensity. Therefore a trade-off is made between electron trapping over the defects levels at elevated temperature and on higher silicon doping concentration in Graphite:SixZnO(1-x). This trade-off is well explained using increment/decrement in photoluminescence intensity and with the excitation of the electron with a suitable band diagram. Finally, the possible device applications employing the fabricated Graphite:SixZnO(1-x) tricomposite nanostructures has also been explored using the Commission International de I'Eclairage (CIE) diagram and is found to be in efficient designing of future light emitting diodes (LEDs).
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