Abstract
A ferroelectric-gated fin-shaped field effect transistor (Fe-FinFET) is fabricated by connecting a Pb(Zr0.2Ti0.8)O3-based ferroelectric capacitor into the gate electrode of FinFET. The ferroelectric capacitor shows coercive voltages of approximately −1.5 V and 2.25 V. The polarization-induced threshold voltage shift in the Fe-FinFET is investigated by regulating the gate voltage sweep range. When the maximum positive gate to source voltage is varied from 4 V to 2 V with a fixed starting negative gate to source voltage, the threshold voltage during the backward sweep is increased from approximately −0.60 V to 1.04 V. In the case of starting negative gate to source voltage variation from −4 V to −0.5 V with a fixed maximum positive gate to source voltage of 4 V, the threshold voltage during the forward sweep is decreased from 1.66 V to 0.87 V. Those results can be elucidated with polarization domain states. Lastly, it is observed that the threshold voltage is mostly increased/decreased when the positive/negative gate voltage sweep range is smaller/larger than the positive/negative coercive voltage, respectively.
Highlights
Following Moore’s law, the footprint of a transistor in as integrated circuit has been aggressively scaled down, resulting in improved performance/power consumption/integrity of integrated chips (ICs).In order to keep the Moore’s law alive, various steep switching devices featuring sub-60 mV/decade subthreshold slope (SS) have been proposed, resulting in overcoming the lower limit of SS (i.e., 60mV/decade at 300 K), a.k.a., Boltzmann tyranny: tunnel field-effect transistor (TFET) [1], phase-transitionFET [2,3], feedback FET [4,5], and negative capacitance FET (NCFET) [6]
Compared with previous results which show one sharp peak [22], the two peaks at the negative coercive voltage would have originated from aging effect
When a voltage higher than the coercive voltage is applied, a polarization state can be inverted to the other state
Summary
Following Moore’s law, the footprint of a transistor in as integrated circuit has been aggressively scaled down, resulting in improved performance/power consumption/integrity of integrated chips (ICs). Non-volatile memory devices have been researched as synapse devices for the neuromorphic system, such as phase-change memory [14,15], resistive random-access memory [16], conductive-bridge random-access memory [17], and ferroelectric-gated FET (FeFET) [18]. Among these candidates, FeFET has been highlighted because. It has been demonstrated that FeFETs can be utilized as multi-bit synapse devices by adjusting the number of ferroelectric domains [29] From this point of view, the impact of domain switching on the operation of FeFET needs to be investigated to comprehend more deeply the operation of FeFET-based synapse devices. Those results are elucidated with polarization switching and coercive voltage in ferroelectric material
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