Retention and Read Endurance Characteristics of a Ferroelectric Gate Field Effect Transistor Memory with an Intermediate Electrode

Abstract

Fundamental characteristics such as retention and read endurance of a ferroelectric gate field effect transistor (F-FET) memory with an intermediate electrode were investigated and reported. It was verified that the retention time of the new F-FET was longer than 98 h. By taking into account the leakage currents of both the ferroelectric capacitor Cf and the MOSFET used for data writing (W-FET), we found that, for positive reading voltage, the leakage currents of the ferroelectric capacitor and the W-FET are unfavorable for the Pr+ state and the Pr- state, respectively, in terms of read endurance. The overall read endurance is determined by a competition between the leakage currents of the Cf and the W-FET. The drain-connected configuration (DCC) was effective to minimize the unexpected influence of the leakage current of the W-FET.