Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength

Abstract

A tunable wavelength laser system and high-resolution transient capture system are introduced to characterize transients in high-mobility MOSFETs. The experimental configuration enables resolution of fast transient signals and new understanding of charge collection mechanisms. The channel layer is critical in the charge collection process for the InGaAs FinFETs examined here. The transient current mainly comes from the channel current, due to shunt effects and parasitic bipolar effects, instead of the junction collection. The charge amplification factor is found to be as high as 14, which makes this technology relatively sensitive to transient radiation. The peak current is inversely proportional to the device gate length. Simulations show that the parasitic bipolar effect is due to source-to-channel barrier lowering caused by hole accumulation in the source and channel. Charge deposited in the channel causes prompt current, while charge deposited below the channel causes delayed and slow current.