Uncooled Detector Challenges for mm/sub-mm Range

Abstract

Responsivity R and noise equivalent power NEP of long channel unbiased silicon field effect transistors (FETs) as mm-wave/THz detectors, accounting for resistive and capacitive parasitics, are compared with those of contemporary Schottky barrier diode (SBD) mm/sub-mm detectors. The ultimate performance limits of such detectors are estimated. It is shown that with account of the parasitics and detector-antenna matching one can describe these FET and SBD detector parameters. As compared to SBD detectors, the FET ones seem to be preferable in future applications for active imaging, especially in the radiation region above the frequency range of 1 THz or a little bit lower. They should overcome SBD ones because of possible better adjustment of FET parameters to antenna impedance due to nowadays better developed silicon technologies and the possibility of proper integrated detector design/fabrication compared to technologies of III-V ternary compounds applied to SBD detectors.