Abstract

In this Letter, an uncooled monolithic resonant terahertz (THz) thermal detector using a standard 55 nm CMOS technology is presented. The detector is constructed by the integration of a loop antenna loaded with a polysilicon resistor and a proportional to absolute temperature sensor, which is used as a temperature-sensitive device. An overview of the design considerations, as well as the comparatively better characterisation results are demonstrated in detail. A high-temperature coefficient of voltage (TCVD) of 10.11 mV/°C, a maximum responsivity of 48.67 V/W, and a minimum noise equivalent power of 1.22 μW/Hz0.5 for the thermal detector are measured at the optimal operating point of 2.58 THz.

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