Unconventional Seedless Multilayers with Large Perpendicular Anisotropy for Back-End-of-Line Compatible Spintronic Devices

Abstract

An unconventional class of hard and out-of-plane magnetized seedless multilayers (SL-MLs) of the form [Co/insertion layer/Pt]n, grown as a top reference layer in magnetic tunnel junctions (MTJ), was investigated. Among different non-ferrous insertion layers (Ta, Cu, Mg, W, Ru, and Al), Ta produces the highest perpendicular magnetic anisotropy. A back-end-of-line (BEOL) compatible hard top reference layer using Ta-inserted SL-MLs was achieved, exhibiting more than twice effective perpendicular anisotropy compared to a conventional top reference layer. Using this top reference layer, we developed three types of spintronic memory stacks: (a) top-pinned MTJ stacks that can withstand annealing up to 425 °C, (b) BEOL compatible double-MTJ memory cells with read/write mode control layer enabling a faster readout and low-voltage writing, and (c) 2-bit MTJ stacks combining spin-transfer torque and spin-orbit torque writing. The magnetic properties of these three types of memory stacks are discussed.