Abstract
Two dimensional materials such as graphene and transition metal dichalcogenides (TMDC) have gained profound research interest as novel optical material owing to their remarkable optical and electrical properties. The formation of atomically controlled van der Waals (vdW) heterostructured architectures facilitates comprehending innovative photosensing and optoelectronic devices exhibiting unique properties than conventional counterparts. We have demonstrated the use of MoS2/graphene heterostructured field effect transistor (FET) for photosensing applications. For different drain to source voltages (Vds), the effect of DUV irradiations is studied, revealing an increased photoresponse. Optical performance of FET is studied by evaluating photoresponsivity (Rλ), detectivity (D∗) and external quantum efficiency (EQE). Optical response with Rλ and D∗ approaching 3.34 × 103 AW−1 and 1.004 × 1012 jones, respectively is obtained. This approach of creating TMDCs/graphene based heterostructured devices provide new insights for development of high performance photosensors for next generation optical and sensing applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
