Abstract
Graphene (Gr) and transition metal dichalcogenides (TMDC) have wide scope in electronic and optoelectronic industry because of incredible optical and electrical properties. The study investigates the utilization of molybdenum disulfide-graphene (MoS 2 -Gr) hybrid field effect transistor (FET) as photosensor. The photo-current response of hybrid FET was studied for source-drain voltages(V ds ) range from 1 to 5 V. The important optical figure of merits such as photoresponsivity (R λ ) and external quantum efficiency (EQE) are calculated to evaluate the performance of FET. Enhancement in the optical performance of FET is observed. MoS 2 -Gr divulges high R λ (3.34 × 103 AW-1) while the EQE of hybrid FET (1.8 × 104) is higher than that of individual structures. This methodology of fabricating TMDCs-Gr based hybrid devices opens new doors for advances in highly efficient photosensor for sensing and optoelectronic applications.
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