Ultraviolet response of ZnO nanorod/Sb-doped ZnO thin film homojunction structure prepared by all-chemically wet process

Abstract

In this work, ZnO nanorod/Sb-doped ZnO thin film structure was fabricated and its relevant properties were investigated. The device was prepared by Sb-doped ZnO sol-gel spin coating technique onto ITO substrate annealed in nitrogen atmosphere followed by the hydrothermal process to obtain ZnO nanorod. The crystal structure demonstrates (002) plane dominant hexagonal wurtzite ZnO without phase impurity. The deterioration in the crystal structure of Sb-doped ZnO due to the Sb is incorporated in the ZnO lattice. The element component in each layer is confirmed by depth profile measurement. The low transmittance in the visible region is due to high reflection at the surface of the ZnO nanorod. The electrical measurement confirms that ZnO nanorod/Sb-doped ZnO thin film has p-n homojunction properties under dark conditions and 18 times higher photovoltage than the Sb-doped/undoped ZnO double layer device under UV LED irradiation due to enhanced photon harvesting of ZnO nanorod structure.