Abstract
Synthesis of UV light emitting stressed Si nanoclusters embedded in amorphous Si layer, using a dual Ag ion implantation technique has been reported. The stressed nanoclusters exhibit a very narrow photo-luminescence in UV regime at around 3.28 eV. Presence of metal ions like Ag, in the vicinity of Si nanoclusters enhances the luminescence due to localized surface plasmon resonance effect. The magnitude of stress has been calculated using Raman scattering method.
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