Formation of Silicon Carbide in the Surface Layer of Metals by Dual High Energy Ion Implantation

Abstract

The dual ion implantation of silicon and carbon into copper (99.9%), iron (99.9%), SKD11 steel and SUS304 austenitic stainless steels were carried out by the MeV energy ion accelerator. The cross sectional images of implanted layer were observed by scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDS). The microstructure of surface layer was analyzed using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). It was shown that silicon carbide were formed by the dual ion implantation into metals. The hardness of sample was measured by the Nano-Indenter. Consequently, it was understood that the hardness of implanted substrate was improved by dual ion implantation.