Abstract
It has previously been shown that ultraviolet (UV) ozone oxidation can be utilized for removing carbon contaminants on Si surfaces and forming a thin oxide film which serves as a protective overlayer for chemical attack. In this study, the UV ozone oxidation of a Si surface has been investigated using photoemission spectroscopy with synchrotron radiation and surface infrared spectroscopy in the multiple internal reflection mode. It is shown that during UV ozone oxidation a thin SiO2 film approximately 5 Å thick, which presumably corresponds to one monolayer of six-member rings of SiO4 tetrahedra, is initially formed and subsequently slow oxidation occurs. It is suggested that the formation of this 5-Å-thick oxide film is the key to protecting the Si substrate surface from the adsorption of impurities which would occur if the bare Si surface were exposed to air.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
