Abstract
A novel n-type transparent conducting oxide, an LaTiO3-doped indium oxide (ILTO) film, has been developed by double electron beam evaporation associated with an End Hall ion-assisted deposition technique. ILTO shows room-temperature UV photoluminescence (similar to 386 nm) and a thermally stable highly effective WF (similar to 5.2 eV) properties. ILTO is applied to replace traditional indium tin oxide and demonstrates positive effects on organic optoelectronics.
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