Zr-doped indium oxide films for silicon heterojunction solar cells

Abstract

Zirconium (Zr)-doped indium oxide (IZrO) films were prepared by reactive plasma deposition (RPD). The best IZrO film has high mobility of 151.8 cm2/V·s and low carrier concentration of 1.7 × 1020/cm3 owing to annealing treatment and hydrogen doping. IZrO film was used as a transparent conducting electrode in silicon heterojunction (SHJ) solar cells. The SHJ cell (274.15 cm2) has a conversion efficiency of 24.55%, open-circuit voltage of 747.47 mV, short circuit current density of 39.98 mA/cm2, and filling factor of 82.18%.