Abstract
ABSTRACTIn this paper, we report the growth and fabrication of non-polar A-plane AlGaN multiple quantum well based ultraviolet light emitting diodes (UV-LEDs). The LEDs were grown on R-plane sapphire substrates using molecular beam epitaxy (MBE). The Current-voltage characteristics of the fabricated devices demonstrated rectifying behavior with a series resistance of 38 ohms. An electro-luminescence emission at 338 nm was obtained.
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