Ultraviolet Light-Emitting Diodes Using Aluminium Indium Nitride Nanowire Structures

Abstract

Ultraviolet (UV) light-emitting diodes (LEDs) have various applications in the field of biochemistry, medicine, water/air purification, etc. To achieve efficient UV LEDs, researchers have essentially focused on the use of AlGaN alloys in the active region. However, the practical applications of AlGaN based UV LEDs are severely limited due to poor external quantum efficiency (EQE). Some reasons behind the low EQE in AlGaN based UV LEDs are efficiency droop, mostly due to electron leakage into the p-region, poor light extraction efficiency (LEE) which is mainly due to the total internal reflection and the absorption of UV light in the p-GaN contact layer. Identifying and developing the potential of alternative UV materials will be critical to make further progress in the development of deep UV emitters. In this regard, AlxIn1-xN alloy has not been widely studied even though it holds great potential applications in UV and visible light-emitting devices [1]. In this study, we have performed the epitaxial growth, electrical and optical properties of spontaneously grown AlInN nanowires on Si (111) substrate by molecular beam epitaxy (MBE) and demonstrated a high crystalline quality of AlInN nanowire LED structures with stable and strong EL emission at ~299 nm peak wavelength.The AlInN nanowire LED structure, shown in Fig. 1(a), was spontaneously grown on n-Si (111) substrates under nitrogen rich conditions by a Veeco GEN II MBE system equipped with a RF plasma-assisted nitrogen source. The growth conditions for GaN nanowire segments include a growth temperature of ~ 770 °C, nitrogen flow rate of 1 sccm, and forward plasma power of ~ 400 W. The device active region consists of ~ 100 nm n-Al0.78In0.22N, 40 nm undoped Al0.75In0.25N well and 100 nm p-Al0.78In0.22N layers. Growth temperature of the active region was at ~ 670 ̶ 700 °C to increase the In incorporation in AlInN segments and the nitrogen flow rate was kept at 2.5 sccm, while the plasma power was fixed at 400 W. After being grown by MBE, the nanowire LED samples were fabricated using standard lithography method as reported elsewhere [2]. The device characterization was performed on LED with an area size of 500×500 µm2. Photoluminescence (PL) spectrum of the grown nanowire LEDs exhibits strong emission in the UV wavelength range as shown in Fig. 1(b). The peak emission at ~ 299 nm and ~ 280 nm is responsible for the emission from the AlInN quantum well and barriers, respectively. The AlInN nanowire UV LEDs have strong EL intensity with the peak wavelength at ~ 299 nm, as shown in Fig. 1(c). This work is being developed toward the achievement of high power AlInN nanowire UV LEDs, and the result will be presented. Reference R. T. Velpula, B. Jain, M. R. Philip et al., Sci. Rep., 10(1) 1-10 (2020).R. T. Velpula, B. Jain, H. Q. T. Bui et al., Optical Materials Express, 10(2) 472-483 (2020) Figure 1