Abstract
We achieved lasing of an optically pumped ultraviolet BeMgZnSe-based quantum-well laser grown closely lattice matched to a GaP substrate. A laser emission wavelength of 373 nm at 13 K was observed. The threshold excitation power density was 0.415MW∕cm2 at 13 K. In addition, we have demonstrated lasing up to 130 K. This indicates that the BeMgZnSe compound is promising as a new candidate for ultraviolet (UV) laser diodes, which possess potential application for UV optoelectronic integrated circuits UV-OEICs on silicon substrates.
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