Abstract
Electronic structures of Zn1-xMnxTe films (0<or=x<or=0.7) grown epitaxially on GaAs(100) substrates have been investigated by means of in situ measurements of conduction band inverse photoemission and valence band photoemission spectra. The inverse photoemission spectrum of pure ZnTe exhibits clear peak structures at 4.0 and 6.7 eV above the valence band maximum reflecting maxima of density of states of conduction bands. With increasing Mn composition, new peaks show up at 3.5 eV in the inverse photoemission spectra and at -3.7 eV in the photoemission spectra. These peaks are ascribed to emission from the Mn 3d up arrow and 3d down arrow states with eg symmetry, respectively, and provide a spin exchange splitting energy of 7.2+or-0.2 eV. The Mn 3d-derived features are very similar to those in Cd1-xMnxTe, as a result of the close similarity of the local environment around the Mn atom.
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