Abstract
Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire structures can greatly improve the sensitivity of sensors with many quantum effects. This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, p-n junction type and p-i-n junction type. The current state of the art in wide bandgap semiconductor materials suitable for producing nanowires for use in UV detectors, i.e., metallic oxide, III-nitride and SiC, during the last five years is also summarized. Finally, novel types of UV detectors such as hybrid nanostructure detectors, self-powered detectors and flexible detectors are introduced.
Highlights
Ultraviolet (UV) detectors have received considerable attention due to their important applications in the military and civilian realms
When solar UV radiation passes through the ozone layer, the 240–280 nm wavelengths are strongly absorbed. Such radiation is almost non-existent in the atmosphere near the ground, and comprises the so-called solar-blind region (SBR) [6]
Corresponding nanowire-structured UV detectors are discussed in following sections
Summary
Ultraviolet (UV) detectors have received considerable attention due to their important applications in the military and civilian realms. Wide bandgap semiconductors have many useful characteristics, such as low permittivity, high breakdown electric-fields, good thermal conductivity, high electron saturation rates and radiation resistance. They can work at high temperatures, and are ideal for developing semiconductor devices with high frequency and power, and high temperature and radiation resistance [7]. In 2002, Yang and coworkers used a ZnO single nanowire for a UV detector and obtained excellent UV response, setting off a stream of research into the use of one-dimensional (1D). Wide bandgap semiconductor nanowire-based UV detectors are discussed detectors. Wide bandgap semiconductor nanowire-based UV detectors are discussed in in detail.
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