Ultraviolet detecting properties of ZnO-based thin film transistors

Abstract

ZnO-based thin film transistors (TFTs) have been fabricated on a SiO 2/p-Si substrate by rf magnetron sputtering at room temperature and they exhibited a saturation current level of a few μA under a gate bias of 40V, electron mobility of less than 0.05 cm 2/V s, and on/off current ratio of ∼10 5 in the dark. Illuminated by ultraviolet (UV, λ=340 nm) light with an optical power density of 1.26 mW/cm 2, our TFT displayed a high photocurrent gain of more than 50 μA at the same gate bias of 40 V and it also showed that the photocurrent decreases with lowering the UV intensity. In a channel depletion state with a gate bias of −40 V, the photo-detecting sensitivity becomes much higher than in the accumulation state with the gate bias of 40 V.