Abstract
We demonstrated a flexible resistive switching device based on ultrathin Ag2Te nanowire (NW) films and Au nanosheet (NS) electrodes by exploiting a monolayer assembly on the water surface for macroscale two-dimensional structures. Firstly, ultrathin TeNWs (diameter ≈ 10 nm) are rapidly assembled on the water surface as a form of monolayer and transferred to fabricate TeNW films on various substrates with any available size. An assembled TeNW film was used as a template to produce a Ag2TeNW film through chemical transformation. A well-aligned Ag2TeNW film device showed reversible resistive switching properties when the Ag composition of the silver telluride NW becomes stoichiometric Ag2Te. Additionally, a non-stoichiometric Ag2+δTeNW film shows an increased On/Off ratio. For a flexible memory device, ultrathin AuNSs (thickness ≤20 nm) were adopted as working electrodes, since thermally deposited gold electrodes tend to crack under strain, which can fail to maintain the electrical properties. A paper-like flexibility of AuNS proved its capability as optimal electrodes of ultrathin Ag2TeNW film-based resistive memory devices.
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