Abstract
Integration issues of SiGe strained layers in Si-technology-based integrated circuits are addressed. The present status of the silicon dioxide formation on SiGe films is reviewed. Results of our studies on the low temperature (150–200°C) growth of ultrathin oxides using microwave plasma (in both O2 and N2O ambient), compositional analysis, electrical characterization and interfacial properties of the oxides are presented. Hole confinement in a Gas Source Molecular Beam Epitaxy (GSMBE) grown Si0.74Ge0.26/Si quantum well on silicon using (i) computer simulation and (ii) C-V measurements are also demonstrated.
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