Abstract
We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers on compressively strained Si1−xGex substrates and their structural characteristics. The uniform Ni(Al) germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 °C with an optimized Al atomic content of 20 at. %. We find only two kinds of grains in the layer. Both grains show orthogonal relationship with modified B8 type phase. The growth plane is identified to be {10-10}-type plane. After germanosilicidation the strain in the rest Si1−xGex layer is conserved, which provides a great advantage for device application.
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