Abstract
Perpendicular ultrathin RE-TM films with thickness 3 nm were investigated for potential use as free layers of perpendicular magnetic tunnel junctions. The free layer thickness should be as thin as possible to reduce spin-transfer switching current density while maintaining adequate thermal stability. Using Ti or Al as under- and over-layers, we found that both 3 nm GdFeCo and TbFeCo films had perpendicular magnetic anisotropy (PMA), but DyFeCo had PMA only in cases where thickness exceeded 5 nm. The effective PMA constants of TbFeCo films were of order of 105 erg/cm3, which provided sufficient thermal stability. By annealing at various temperatures, we found that the coercivity of TbFeCo films can be ranged from 120 to 1000 Oe. Therefore, insertions of under/overlayers together with suitable annealing treatment provide a way to fabricate RE-TM ultrathin layer with desired magnetic properties.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
