Abstract

Perpendicular magnetic tunnel junctions (pMTJs) constitute the basic element for magnetic random access memories [1], thanks to their non-volatility, high density, and low power consumption. Their multifunctional properties make it possible to operate also as magnetic field sensors, spin torque nano-oscillators (STNO) or microwave signal detectors [2]. However, quite generally their interfacial perpendicular anisotropy (iPMA) is very sensitive to temperature, and thus to Joule heating when an electric current is passed through them [3]. The induced heating decreases the perpendicular anisotropy and thereby reduces the thermal stability and the potential for memory applications of pMTJs. Nevertheless, here we demonstrate that Joule heating induced modifications of iPMA can be of advantage for radiofrequency (RF) signal generation and detection, that will find applications within wireless communication systems used for the Internet of things (IoT).Quite generally, one can distinguish two different RF dynamical regimes and excitations. The first one is the RF signal generation, where upon injection of a DC current, the spin transfer torque (STT) induces steady state oscillations. The second is the RF signal detection, where an injected RF voltage, (in absence or presence of an additional DC current), excites resonantly via STT the magnetization, which results in a rectified DC voltage in the output. Both regimes have been demonstrated in numerous experiments and are promising for RF applications such as wireless communications [4] or ultra-fast spectrum analysis [5], as well as for neuromorphic computation [6]. A major advantage of MTJ structures is their GHz operational frequency, their high frequency tunability, the possibility to sweep-tune the frequency on short time scales as well as their high sensitivity to low RF power signals [7]. Here we report on the Joule heating effects in pMTJs for both: STT induced RF signal generation and active (RF + DC) RF signal detection. Results are presented for two types of pMTJs, one for which the free layer (FL) thickness is t = 1.4 nm and one with t = 1.8 nm. This FL thickness determines the orientation of the FL magnetization (in-plane for t=1.8nm, out-of-plane for t=1.4nm) due to the competition between the iPMA and the demagnetizing energy. For pMTJs with FL thickness of t = 1.8 nm (in-plane FL), under in plane and/or out of plane bias fields, only damped oscillations have been detected when injecting a DC current. The most interesting result here is a very large frequency shift with DC current characterized by a slope of -4 GHz/mA that occurs for both current signs. We attribute this current-sign-independent frequency shift to the changes in the iPMA due to Joule heating. However, the STT effect is noticeable in the power of the excitations, see Fig. 1a. This will be important for the RF signal detection, where for one current sign it enhances the output voltage by a factor of 4, and strongly reduces it for the opposite sign. The frequency tuning via current will be of interest for the RF signal detection because it allows one to easily tune the detection frequency band in a relatively large range, as illustrated in Fig. 1b, without the need of an external applied field. We emphasize that this tuning is attributed to the Joule heating and not to the STT that does not lead to strong frequency shifts in the damped regime. However, a similarly high frequency tuning has also been observed in the steady state oscillation regime for devices with FL thickness t = 1.4 nm (out-of-plane FL) under DC current and out-of-plane field . The corresponding frequency tuning is close to - 3 GHz/mA (frequency redshift) with a minimum linewidth of 30 MHz. In view of applications, we tested the frequency modulation using sinusoidal rf signals. Modulation was observed for modulation frequencies larger than 1 GHz, which greatly exceeds the amplitude relaxation frequency given by ΓP ( ~ 200 MHz) of the uniform STNO. Analysis of the phase noise indicates that there are two cut-off frequencies one due to the amplitude relaxation and one due to the heating.To conclude, this work demonstrates how Joule heating in pMTJs can be exploited to add functionalities to RF signal generation and detection.The authors acknowledge partial funding from ERC MAGICAL No 669204, the Nanoscience Foundation (Grenoble, France) and the EU Horizon 2020 project GREAT No 687973. **

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