Abstract
Abstract MOCVD technology has recently advanced remarkably to meet a wide range of compound semiconductor technology, from lasers and 2D electron gas devices to various quantum effect devices. A single quantum well size is controllable within about one monolayer and a coupled double quantum well realizes an artificially controllable one-dimensional two-atom molecule. TEM images of the superlattice structures demonstrate well-defined GaAs/AlAs boundaries and layers as thin as (GaAs)2(AlAs)2 are clearly observable. In contrast to MBE, even the quantum well grown at a temperature as high as 820°C shows a sharp photoluminescence peak. The spectral width is related to the interface roughness and the difference from MBE in its dependence on growth temperature is ascribed to the difference in interface structure and in their growth mechanisms.
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