Abstract
Misfit dislocations have been studied in a range of epitaxial metal/semiconductor systems in which the crystal structures of the deposit and substrate differ. Studies of Pd 2Si/(111)Si, NiSi 2/(111)Si, NiSi 2/(001)Si and (001)Al/(001)GaAs show that in all these systems misfit is relieved by imperfect dislocations of lower energy than the perfect edge dislocations assumed in the Frank and van der Merwe theory. The presence of imperfect misfit dislocations has a profound influence on interfacial structure. 1 6 〈11 2〉 dislocations in Pd 2Si/(111)Si and BNiSi 2/(111)Si (referred to silicon) are associated with interfacial steps, and 1 4 〈111〉 dislocations in NiSi 2/(001)Si produce an irregular interfacial domain structure. 1 4 〈110〉 dislocations in Al/(001)GaAs also give rise to an interfacial domain structure and may determine the interfacial atomic structure itself. In this paper the types of misfit dislocation found in these systems and their role in determining interfacial atomic structure and the mechanism of film growth are analysed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
