Abstract
The generic parameters and processes involved in solid phase epitaxial growth of ultrathin films by contact reaction are discussed. The particular strengths of quantitative reflection high-energy electron diffraction (RHEED) and Auger line-shape analyses for separating coexisting phases are demonstrated with examples from the Ni/Si(111) system. Using RHEED Kikuchi patterns and rocking curves, we identify the ordered structures NiSi2 (mixed A and B type) and Ni2Si-θ. From the Auger line shape we find that the low-coverage room-temperature material is disordered Ni2Si, the NiSi2 epitaxial layers are capped with a layer of excess silicon, and the surface layers pass through a NiSi-like phase in the transformation from Ni2Si to NiSi2.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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