Ultrathin FDSOI four-gate transistors (G4-FETs)

Abstract

Four-gate (G4-FET) transistors with ultrathin body and buried oxide (UTBB) are investigated. The devices were fabricated, measured and simulated in UTBB FD-SOI technology for the first time. The G4-FETs had either typical H-gate or Fork-gate configuration. In the latter device, the distance between the side junctions can be shrunk which improves the drain current modulation by the lateral gates. The overall drop in performance compared to earlier, thicker body implementations is explained by the onset of supercoupling effect in ultrathin devices.