Abstract
An ultrathin-channel trench single gate tunnelling field-effect transistor (trench SG-TFET) with a 5 nm channel thickness is proposed and investigated. Trench SG-TFETs demonstrate a higher I ON (∼8 times), a steeper sub-threshold swing (SS) (average SS of 46.2 mV/decade and point SS of 21.8 mV/decade), and a higher I ON/I OFF current ratio (∼10 times) as compared with the conventional SG-TFET at V DS = 0.4 V and temperature of 300 K. Also by using intrinsic region in drain, it has a strong immunity to short-channel effects in extremely scaled trench SG-TFETs. The proposed trench SG-TFET seems to be attractive for future energy-efficient circuit applications.
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