Ultra-thin body InAs-MOSFETs with elevated source/drain contacts

Abstract

In this study, InAs metal-oxide-semiconductor field effect transistors (MOSFETs) ultra-thin body (UTB) were fabricated with self-aligned method. 4 nm thick Al 2 O 3 gate oxide was deposited by Atomic Layer Deposition (ALD) technique. Ni-alloyed ohmic contacts for n-type source and drain (S/D) regions were formed at low annealing temperature (250°C). We developed a special shape based on the vertical diffusion of Ni metal by capillarity. We have systematically studied and analyzed the sheet resistance (R sheet ) of Ni-epilayer alloy and the lateral diffusion of the Nickel alloy. For a MOSFET with a gate length (L G ) of 150 nm, we obtained a maximum drain current (I ON ) of 700 mA/mm, and the extrinsic transconductance (G M, MAX ) showed a peak value of 500 mS/mm.