Abstract
Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high-k oxides on hydrogenated-diamond (H-diamond) for metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. High-k oxide insulators are deposited using atomic layer deposition (ALD) and sputtering deposition (SD) techniques. Electrical properties of the H-diamond MOS capacitors with high-k oxides of ALD-Al2O3, ALD-HfO2, ALD-HfO2/ALD-Al2O3 multilayer, SD-HfO2/ALD-HfO2 bilayer, SD-TiO2/ALD-Al2O3 bilayer, and ALD-TiO2/ALD-Al2O3 bilayer are discussed. Analyses for capacitance-voltage characteristics of them show that there are low fixed and trapped charge densities for the ALD-Al2O3/H-diamond and SD-HfO2/ALD-HfO2/H-diamond MOS capacitors. The k value of 27.2 for the ALD-TiO2/ALD-Al2O3 bilayer is larger than those of the other oxide insulators. Drain-source current versus voltage curves show distinct pitch-off and p-type channel characteristics for the ALD-Al2O3/H-diamond, SD-HfO2/ALD-HfO2/H-diamond, and ALD-TiO2/ALD-Al2O3/H-diamond MOSFETs. Understanding of fabrication routines and electrical properties for the high-k oxide/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOSFET gas sensors.
Highlights
Due to limitation of its bandgap energy, thermal conductivity, and electron saturation velocity, Si-based electronic devices cannot meet future demands in fields of high-power, high-temperature, high-frequency, and low power loss
Understanding of fabrication routines and electrical properties for the high-k oxide/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOS field-effect transistors (MOSFETs) gas sensors
We have demonstrated above for the electronic properties of several high-k oxide insulators on the H-diamond for the MOS capacitors
Summary
Due to limitation of its bandgap energy, thermal conductivity, and electron saturation velocity, Si-based electronic devices cannot meet future demands in fields of high-power, high-temperature, high-frequency, and low power loss. Si-, GaAs- and SiC-based metal-oxide-semiconductor (MOS) capacitor and MOS field-effect transistor (MOSFET) gas sensors have been developed greatly [22,23,24,25,26]. Diamond has superior properties over other semiconductors, there are rarely reports for the diamond-based MOS capacitor and MOSFET gas sensors. At the same electric field, the oxide insulator with a higher-k value can response a larger sheet hole density for the MOS electronic devices. 2 [29], heterojunctions are demonstrated
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