Abstract
In this paper, a novel through mold via (TMV)-embedded fan-out wafer-level package (FOWLP) technology was demonstrated to manufacture the well-designed Antenna in Package (AiP) with ultrathin thickness (0.04 λ0). Double-sided redistribution layers (RDLs) were employed to build the patch antenna, while a TMV interposer was used to connect the front and back RDLs. By optimizing the AiP’s parameters, the patch antenna can achieve a wide impedance bandwidth of 17.8% from 24.2 to 28.5 GHz, which can cover the 5G frequency bands. Compared with previous works, the proposed AiP has significant benefits in terms of its ultralow profile, easy processing, and high gain. Hence, the TMV-embedded FOWLP should be a promising technology for fifth generation (5G) millimeter wave (mm-Wave) applications.
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