Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter (Adv. Electron. Mater. 4/2022)

Abstract

Transition Metal Dichalcogenides Seongin Hong, Sunkook Kim, and colleagues present the first report which not only proposes a novel approach to improve the stability of two-dimensional transition metal dichalcogenides based field-effect transistors but also implements a complementary metal oxide semiconductor inverter circuit using it. In article number 2101012, the authors develop high-stability tungsten diselenide field-effect transistors with an ultrathin Al-assisted alumina passivation.