Abstract
Measurements of the changes in ultrasonic velocity were performed on bulk single-crystalline silicon irradiated with fast-neutron doses up to 1.7×10 21 and 3.2×10 21 n/cm 2 ( E>0.1 MeV). Compared to the unirradiated material, a large additional effect is observed at low temperatures the behavior of which is similar to the predictions of the tunneling model. Together with results previously obtained from attenuation measurements and Raman spectroscopy, this result puts the presence of tunneling states in high coordinated bulk silicon clearly in evidence.
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