Abstract
Measurements of the changes in ultrasonic velocity were performed on bulk single-crystalline silicon irradiated with fast-neutron doses up to 1.7×10 21 and 3.2×10 21 n/cm 2 ( E>0.1 MeV). Compared to the unirradiated material, a large additional effect is observed at low temperatures the behavior of which is similar to the predictions of the tunneling model. Together with results previously obtained from attenuation measurements and Raman spectroscopy, this result puts the presence of tunneling states in high coordinated bulk silicon clearly in evidence.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
