Abstract
We report the development of graphene derivative deposition on silicon wafers through ultrasonic atomization process. The study includes the ultrasonic atomizer system design, process development, characterization of the nanomaterial, and its heat transfer analysis. In this study, ultrasonic atomizer system was developed to deposit graphene oxides on 8”silicon wafer for seamless integration with semiconductor processes. The atomization process was performed in a chamber under control environment to ensure high quality of deposition process.
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