Abstract
A very shallow p+n junction was formed by BF2+ ion implantation and excimer laser annealing (ELA) with single pulse irradiation. A thin amorphous layer formed by low-energy implantation was recrystallized effectively by single-pulse irradiation of an excimer laser. A shallow junction with little redistribution and sheet resistance as low as 100 Ω\\Box was obtained. The junctions formed by ELA were compared with those formed by conventional rapid thermal annealing (RTA). It was confirmed that ELA with single-pulse irradiation can suppress unintentional diffusion of the implanted boron, and is more suitable for controlling the impurity profile of very shallow p+n junctions than RTA.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
