Ultrasensitive radio-frequency pseudomorphic high-electron-mobility-transistor readout for quantum devices

Abstract

Two versions of a cryogenic multistage pseudomorphic high-electron-mobility field-effect transistor amplifier (based on the AlGaAs/InGaAs/GaAs heterostructure) have been designed for quantum device readout and tested at an ambient temperature ∼380mK. The minimum noise temperature of the first amplifier version is below 110±25mK(∼80±20hf∕kB) at 28.6 MHz, estimated from the noise of input 10 kΩ resistance and coupled input tank circuit with an active resistance at the resonant frequency RS(f0)≈17.9kΩ. Its minimum voltage spectral noise density, with respect to the input, is about 200pV∕(Hz)1∕2 and the corner frequency of the 1∕f noise is close to 300 kHz. For the amplifier with the lowest designed back action, the minimum noise temperature below 130±30mK(∼100±25hf∕kB) at 26.8 MHz was estimated when coupled to an input tank circuit with RS(f0)≈61.8kΩ. The power consumption of the amplifiers is in the range of 100–600 μW.